鍍膜室內分成三個區域:①以蒸發源為中心的蒸發區;②以感應線圈為中心的離化區;③以基體為中心的離子加速區和離子到達區。通過分別調節熱發源功率，感應線圈的射頻激勵功率，基體偏壓等，可以對三個區域進行獨立的控制，從而有效地控制沉積過程.改善了鍍層的物性。
射頻離子鍍(du)(du)(du)除了可以(yi)制(zhi)(zhi)備(bei)高質量的金(jin)(jin)屬(shu)薄(bo)膜(mo)外.還(huan)能鍍(du)(du)(du)制(zhi)(zhi)化合物(wu)薄(bo)膜(mo)和合金(jin)(jin)薄(bo)膜(mo)。鍍(du)(du)(du)化合物(wu)薄(bo)膜(mo)采用活性反應法。在反應離子鍍(du)(du)(du)合成化合物(wu)薄(bo)膜(mo)和用多蒸發源(yuan)配制(zhi)(zhi)合金(jin)(jin)膜(mo)時.精確調節蒸發源(yuan)功率(lv).控制(zhi)(zhi)物(wu)料的蒸發速率(lv)是十(shi)分重要的。
在(zai)感應線圈射頻(pin)激勵區(qu)中.電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)在(zai)高頻(pin)電(dian)(dian)(dian)(dian)(dian)場作用下做振蕩(dang)運動(dong).延長了電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)到達陽極(ji)的(de)路(lu)徑(jing).增加(jia)了電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)與反應氣(qi)(qi)體及(ji)金屬(shu)蒸(zheng)(zheng)氣(qi)(qi)碰(peng)掩(yan)的(de)概率.這(zhe)樣可提(ti)高放(fang)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流密度。正(zheng)是(shi)由于高頻(pin)電(dian)(dian)(dian)(dian)(dian)場的(de)作用，使著火氣(qi)(qi)體壓(ya)強降(jiang)低到10-3~10-1Pa，即叮在(zai)高真(zhen)空中進行高頻(pin)放(fang)電(dian)(dian)(dian)(dian)(dian).因(yin)而以(yi)電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)束加(jia)熱蒸(zheng)(zheng)發源的(de)射頻(pin)離子(zi)(zi)(zi)鍍.不必設置差(cha)壓(ya)板。
